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Title: (abstract) Transmission Electron Microscopy of Al<SUB>x</sub>Ga<SUB>1-x</sub>N/SiC Multilayer Structures
Authors: W.T. Pick
George, T.
Khan, M.A.
Kuznia, J.N.
Issue Date: 1-Aug-1994
Citation: New Orleans, LA
Abstract: The potential of wide-band-gap III-V nitrides as solar-blind ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN super lattices (digital alloys); and the incorporation of SiC layers into Al<SUB>x</sub>Ga<SUB>1-x</sub>N structures. By varying the relative periods in a GaN/AlN superlattice, it should be possible to tailor the band gap of the composite to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a close lattice match (< 3%) to Al<SUB>x</sub>Ga<SUB>1-x</sub>N for growth on the basal plane. Demonstration of epitaxial growth for Al<SUB>x</sub>Ga<SUB>1-x</sub>N/SiC multilayers could enable an extension of direct band-gap material towards the visible.
Appears in Collections:JPL TRS 1992+

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