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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/32628
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| Title: | Fabrication of Si/Si<sub>1-x</sub>Ge<sub>x</sub>O<sub>2</sub> Heterojunctions by Molecular Beam Epitaxy and Stain Etching |
| Authors: | Fathauer, R.
George, T.
Jones, E.
Ksendzov, A.
Pike, W. |
| Issue Date: | 22-Jun-1994 |
| Citation: | Boulder, Colorado, USA |
| URI: | http://hdl.handle.net/2014/32628 |
| Appears in Collections: | JPL TRS 1992+
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