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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/31958
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| Title: | Fabrication and Performance of Planar Schottky Diodes with T-gate-like Anodes in 200 GHz Subharmonically-Pumped Waveguide Mixers |
| Authors: | Mehdi, I.
Martin, S.
Dengler, R.
Smith, R.
Siegel, P. |
| Issue Date: | 1995 |
| Citation: | IEEE Microwave and Guided Wave Letters |
| Abstract: | A T-gate-like structure has been developed, fabricated and tested as the anode for millimeter and submillimeter-wave Schottky diodes. The low parasitics of the T-anode diodes yield extremely high cutoff frequencies, making the diodes useable at frequencies well beyond 1 THz. The diodes were tested as an antiparallel-pair, integrated monolithically with microstrip circuitry on a quartz substrate, in a subharmonically pumped waveguide mixer. A double sideband noise temperature of 600 K with a conversion loss of 4.7 dB were measured at 200 GHz. This is believed to be the lowest noise temperature ever reported for a room temperature subharmonically-pumped Schottky diode mixer at this frequency. |
| URI: | http://hdl.handle.net/2014/31958 |
| Appears in Collections: | JPL TRS 1992+
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