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Title: Fabrication and Performance of Planar Schottky Diodes with T-gate-like Anodes in 200 GHz Subharmonically-Pumped Waveguide Mixers
Authors: Mehdi, I.
Martin, S.
Dengler, R.
Smith, R.
Siegel, P.
Issue Date: 1995
Citation: IEEE Microwave and Guided Wave Letters
Abstract: A T-gate-like structure has been developed, fabricated and tested as the anode for millimeter and submillimeter-wave Schottky diodes. The low parasitics of the T-anode diodes yield extremely high cutoff frequencies, making the diodes useable at frequencies well beyond 1 THz. The diodes were tested as an antiparallel-pair, integrated monolithically with microstrip circuitry on a quartz substrate, in a subharmonically pumped waveguide mixer. A double sideband noise temperature of 600 K with a conversion loss of 4.7 dB were measured at 200 GHz. This is believed to be the lowest noise temperature ever reported for a room temperature subharmonically-pumped Schottky diode mixer at this frequency.
Appears in Collections:JPL TRS 1992+

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