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Title: Hydrogen Effects on GaAs Device Reliability
Authors: Kayali, Sammy A.
Issue Date: Apr-1996
Citation: San Diego, California
Abstract: GaAs and InP devices in hermetically sealed packages have been observed to exhibit unacceptable degradation in both RF and DC characteristics. This degradation has been observed to occur at temperatures as low as 125øC. The source of the degradation has been linked to hydrogen gas that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt or Pd metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics.
Appears in Collections:JPL TRS 1992+

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