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Title: GaAs Infrared Detectors
Authors: Gunapala, S. D.
Bandara, S. V.
Issue Date: 1996
Abstract: It is customary to make infrared (IR) detectors in the long wavelength range (8-20 ┬Ám) by utilizing the interband transition which promotes an electron across the band gap (E<sub>g</sub>) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit.
Appears in Collections:JPL TRS 1992+

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