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|Title: ||GaAs Infrared Detectors|
|Authors: ||Gunapala, S. D.|
Bandara, S. V.
|Issue Date: ||1996 |
|Abstract: ||It is customary to make infrared (IR) detectors in the long wavelength range (8-20 µm) by utilizing the interband transition which promotes an electron across the band gap (E<sub>g</sub>) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit.|
|Appears in Collections:||JPL TRS 1992+|
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