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Title: Hydrogen Effects on GaAs Device Reliability
Authors: Kayali, Sammy
Issue Date: 28-Apr-1996
Citation: San Diego, California
Abstract: It has been observed that GaAs devices mounted in hermetically sealed packages, and exposed to burn-in and lifetest temperatures as low as 125 C, exhibit performance degradation in both RF and DC characteristics after relatively short periods of test time (500 hours). This paper will provide a discussion and summary of the general understanding of the failure mechanisms associated with this.
Appears in Collections:JPL TRS 1992+

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