|
BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/23865
|
| Title: | Hydrogen Effects on GaAs Device Reliability |
| Authors: | Kayali, Sammy |
| Issue Date: | 28-Apr-1996 |
| Citation: | San Diego, California |
| Abstract: | It has been observed that GaAs devices mounted in hermetically sealed packages, and exposed to burn-in and lifetest temperatures as low as 125 C, exhibit performance degradation in both RF and DC characteristics after relatively short periods of test time (500 hours). This paper will provide a discussion and summary of the general understanding of the failure mechanisms associated with this. |
| URI: | http://hdl.handle.net/2014/23865 |
| Appears in Collections: | JPL TRS 1992+
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
