NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/19204

Title: Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector
Authors: Sengupta, D. K.
Gunapala, S. D.
Bandara, S. V.
Liu, J. K.
Luong, E.
Hong, W.
Mumolo, J.
Bae, Y.
Stillman, G. E.
Jackson, S. L.
Feng, M.
Bishop, S. G.
Adesida, I.
Chuang, S. L.
Hseih, K. C.
Kim, S.
Ping, A.
Curtis, A. P.
Kuo, H. C.
Change, Y. C.
Liu, H. C.
Issue Date: Mar-1998
Citation: Applied Physics Letters
USA
Abstract: We demonstrate that SiO***sub2*** cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
URI: http://hdl.handle.net/2014/19204
Appears in Collections:JPL TRS 1992+

Files in This Item:

File SizeFormat
98-0478.pdf913.67 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.