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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/19204
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| Title: | Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector |
| Authors: | Sengupta, D. K.
Gunapala, S. D.
Bandara, S. V.
Liu, J. K.
Luong, E.
Hong, W.
Mumolo, J.
Bae, Y.
Stillman, G. E.
Jackson, S. L.
Feng, M.
Bishop, S. G.
Adesida, I.
Chuang, S. L.
Hseih, K. C.
Kim, S.
Ping, A.
Curtis, A. P.
Kuo, H. C.
Change, Y. C.
Liu, H. C. |
| Issue Date: | Mar-1998 |
| Citation: | Applied Physics Letters
USA |
| Abstract: | We demonstrate that SiO***sub2*** cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time. |
| URI: | http://hdl.handle.net/2014/19204 |
| Appears in Collections: | JPL TRS 1992+
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