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Title: Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector
Authors: Sengupta, D. K.
Gunapala, S. D.
Bandara, S. V.
Liu, J. K.
Luong, E.
Hong, W.
Mumolo, J.
Bae, Y.
Stillman, G. E.
Jackson, S. L.
Feng, M.
Bishop, S. G.
Adesida, I.
Chuang, S. L.
Hseih, K. C.
Kim, S.
Ping, A.
Curtis, A. P.
Kuo, H. C.
Change, Y. C.
Liu, H. C.
Issue Date: Mar-1998
Citation: Applied Physics Letters
Abstract: We demonstrate that SiO***sub2*** cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
Appears in Collections:JPL TRS 1992+

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