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Title: Si Tight-Binding Parameters from Genetic Algorithm Fitting
Authors: Klimeck, G.
Bowen, R.
Boykin, T.
Salazar-Lazaro, C.
Cwik, T.
Stoica, A.
Issue Date: Oct-1999
Citation: Superlattices and Microstructures
Abstract: Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.
Appears in Collections:JPL TRS 1992+

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