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Title: Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature
Authors: Leon, R.
Liao, X.
Zou, J.
Cockayne, D.
Qin, J.
Jiang, Z.
Wang, X.
Issue Date: Sep-1999
Citation: Physical Review B
Abstract: Transmission electron microscopy is used to study the morphology and the composition profile of pure Ge islands grown at high temperature on (001) Si by molecular beam epitaxy.
Appears in Collections:JPL TRS 1992+

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