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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/18362
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| Title: | Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature |
| Authors: | Leon, R.
Liao, X.
Zou, J.
Cockayne, D.
Qin, J.
Jiang, Z.
Wang, X. |
| Issue Date: | Sep-1999 |
| Citation: | Physical Review B
USA |
| Abstract: | Transmission electron microscopy is used to study the morphology and the composition profile of pure Ge islands grown at high temperature on (001) Si by molecular beam epitaxy. |
| URI: | http://hdl.handle.net/2014/18362 |
| Appears in Collections: | JPL TRS 1992+
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