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Title: A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT
Authors: Samoska, L.
Pinsukanjana, P.
Gaier, T.
Smith, R.
Ksendzov, A.
Fitzsimmons, M.
Martin, S.
Issue Date: 17-Oct-1999
Citation: IEEE, GaAs Integrated Circuit Symposium
Monterey, California, USA
Abstract: We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
Appears in Collections:JPL TRS 1992+

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