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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/17314
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| Title: | Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots |
| Authors: | Leon, R.
Lobo, C.
Liao, X.
Zou, J.
Cockayne, D.
Fafard, S. |
| Issue Date: | Feb-1999 |
| Citation: | Thin Solid Films
USA |
| Abstract: | InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing. |
| URI: | http://hdl.handle.net/2014/17314 |
| Appears in Collections: | JPL TRS 1992+
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