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Title: Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots
Authors: Leon, R.
Lobo, C.
Liao, X.
Zou, J.
Cockayne, D.
Fafard, S.
Issue Date: Feb-1999
Citation: Thin Solid Films
Abstract: InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.
Appears in Collections:JPL TRS 1992+

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