NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/17314

Title: Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots
Authors: Leon, R.
Lobo, C.
Liao, X.
Zou, J.
Cockayne, D.
Fafard, S.
Issue Date: Feb-1999
Citation: Thin Solid Films
USA
Abstract: InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.
URI: http://hdl.handle.net/2014/17314
Appears in Collections:JPL TRS 1992+

Files in This Item:

File SizeFormat
99-0757.pdf1.03 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on November 15, 2012.
If you have any comments or suggestions for this web site, please e-mail Alexander Smith or call 4-4202.