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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/16828

Title: A 90 GHz Amplifier Assembled Using Flip-Chip Technology
Authors: Samoska, L.
Pinsukanjana, P.
Gaier, T.
Smith, R.
Ksendzov, A.
Fitzsimmons, M.
Martin, S.
Lai, R.
Issue Date: Jan-1999
Citation: Microwave and Guided Wave Letters
USA
Abstract: This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
URI: http://hdl.handle.net/2014/16828
Appears in Collections:JPL TRS 1992+

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