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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/16828
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| Title: | A 90 GHz Amplifier Assembled Using Flip-Chip Technology |
| Authors: | Samoska, L.
Pinsukanjana, P.
Gaier, T.
Smith, R.
Ksendzov, A.
Fitzsimmons, M.
Martin, S.
Lai, R. |
| Issue Date: | Jan-1999 |
| Citation: | Microwave and Guided Wave Letters
USA |
| Abstract: | This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate. |
| URI: | http://hdl.handle.net/2014/16828 |
| Appears in Collections: | JPL TRS 1992+
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