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Title: 160-190 GHz Monolithic Low Noise Amplifiers
Authors: Samoska, L.
Gaier, T.
Kok, Y.
Wang, H.
Huang, T.
Lai, R.
Chen, Y.
Sholley, M.
Block, T.
Streit, D.
Liu, P.
Allen, B.
Barsky, M.
Issue Date: 13-Jun-1999
Citation: IEEE, International Microwave Symposium
Anaheim, California, USA
Abstract: This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
Appears in Collections:JPL TRS 1992+

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