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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/16719
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| Title: | 160-190 GHz Monolithic Low Noise Amplifiers |
| Authors: | Samoska, L.
Gaier, T.
Kok, Y.
Wang, H.
Huang, T.
Lai, R.
Chen, Y.
Sholley, M.
Block, T.
Streit, D.
Liu, P.
Allen, B.
Barsky, M. |
| Issue Date: | 13-Jun-1999 |
| Citation: | IEEE, International Microwave Symposium
Anaheim, California, USA |
| Abstract: | This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. |
| URI: | http://hdl.handle.net/2014/16719 |
| Appears in Collections: | JPL TRS 1992+
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