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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/16405
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| Title: | Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy |
| Authors: | Bell, L. D.
Boer, E.
Ostraat, M.
Brongersma, M. L.
Flagan, R. C.
Atwater, H. A. |
| Issue Date: | 8-Nov-2000 |
| Citation: | Non-volatile Memory Technology Symposium 2000
Arlington, Virginia, USA |
| Abstract: | NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation. |
| URI: | http://hdl.handle.net/2014/16405 |
| Appears in Collections: | JPL TRS 1992+
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