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|Title: ||Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy|
|Authors: ||Bell, L. D.|
Brongersma, M. L.
Flagan, R. C.
Atwater, H. A.
|Issue Date: ||8-Nov-2000 |
|Citation: ||Non-volatile Memory Technology Symposium 2000|
Arlington, Virginia, USA
|Abstract: ||NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.|
|Appears in Collections:||JPL TRS 1992+|
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