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Title: Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy
Authors: Bell, L. D.
Boer, E.
Ostraat, M.
Brongersma, M. L.
Flagan, R. C.
Atwater, H. A.
Issue Date: 8-Nov-2000
Citation: Non-volatile Memory Technology Symposium 2000
Arlington, Virginia, USA
Abstract: NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.
Appears in Collections:JPL TRS 1992+

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