|
BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/15678
|
| Title: | Fabrication of Laterally Coupled InGaAsSb-GaSb-AlGaAsSb DFB Laser Structures |
| Authors: | Sin, Y.
Bicknell-Tassius, R.
Muller, R.
Forouhar, S.
May, R. |
| Issue Date: | 10-Jul-2000 |
| Citation: | International Conference on Environmental Systems
Toulouse, France |
| Abstract: | In this paper, the materials growth, device processing and development of the necessary drive electronics for an antimony based tunable diode laser system are discussed. |
| URI: | http://hdl.handle.net/2014/15678 |
| Appears in Collections: | JPL TRS 1992+
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
