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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/12786
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| Title: | Effects of via-conductor geometry in the electromigration failure of Al:Cu wires |
| Authors: | Leon, R.
Vu, D.
Johnson, A. S.
Ruiz, R.
Okuno, J.
Uribe, J.
Hather, G.
Lloyd, J. R. |
| Issue Date: | 15-May-2001 |
| Citation: | 2nd Annual NEPP Conference - Electronic Parts, Packaging, and Radiation for Space Applications
Pasadena, CA, USA |
| Abstract: | Electromigration (EM) experiments conducted using two types of via/plug to conductor alignment indicate a geometrical dependence of electromigration failure in Al:Cu conductors. The resistance vs time curves show distinctive steps when the alignment is parallel. This is explained by a successive loss of conductivity through the plug due to void formation. In the perpendicular via/conductor arrangement, resistance increases by smaller and closely spaced steps. EM experiments without vias, found that the conductor life under stress increases by at least an order of magnitude. Kinetic studies at four temperatures between 180-240 C found activation energies to be 1.0 plus or minus 0.1eV. |
| URI: | http://hdl.handle.net/2014/12786 |
| Appears in Collections: | JPL TRS 1992+
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