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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/11077
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| Title: | Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate |
| Authors: | Qiu, Y.
Uhl, D. |
| Issue Date: | 25-Nov-2002 |
| Citation: | 15th International Conference on Indium Phosphide and Related Materials
Santa Barbara, CA, USA |
| Abstract: | InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10***sup10*** cm***sup-2***. Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well. |
| URI: | http://hdl.handle.net/2014/11077 |
| Appears in Collections: | JPL TRS 1992+
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