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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/10187

Title: Fabrication of 20 nm embedded longitudinal nanochannels transferred from metal nanowire patterns
Authors: Choi, D.
Yang, E.H.
Issue Date: 20-Feb-2003
Citation: IEEE 16th International MEMS Conference
Kyoto, Japan
Abstract: In this abstract we describe a technique for fabricating nanometer-scale channels embedded by dielectric materials. Longitudinal "embedded " nanochannels with an opening size 20 nm x 80 nm have been successfully fabricated on silicon wafer by transferring sacrificial nanowire structures.
URI: http://hdl.handle.net/2014/10187
Appears in Collections:JPL TRS 1992+

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